收藏本站
Absolute Maximum Ratings (T A = 25°C unless otherwise speci?ed)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T OPR
T STG
T SOL-I
Parameter
Operating Temperature
Storage Temperature
Soldering Temperature (Iron) (2,3,4)
Rating
-40 to +85
-40 to +90
240 for 5 sec
Units
°C
°C
°C
T SOL-F
Soldering Temperature
(Flow) (2,3)
260 for 10 sec
°C
EMITTER
I F
V R
Continuous Forward Current
Reverse Voltage
50
5
mA
V
I FP
Peak Forward
Current (5)
1
A
P D
Power
Dissipation (1)
75
mW
SENSOR
V CEO
V ECO
I C
P D
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation (1)
30
5
20
50
V
V
mA
mW
Electrical/Optical Characteristics (T A = 25°C unless otherwise speci?ed)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
INPUT DIODE
V F
Forward Voltage
I F = 20mA
1.2
1.6
V
I R
λ PE
Reverse Leakage Current
Peak Emission Wavelength
V R = 5V
I F = 20mA
940
10
μA
nm
OUTPUT TRANSISTOR
I D
Collector-Emitter Dark Current
I F = 0mA, V CE = 20V
100
nA
COUPLED
I C(ON)
On-State Collector Current
I F = 20mA, V CE = 5V (6)
0.10
0.40
mA
I CX
V CE (SAT)
Cross-Talk Collector Current
Saturation Voltage
I F = 20mA, V CE =
5V (7)
1
0.3
μA
V
t r
t f
Rise Time
Fall Time
V CC = 5V, I C(ON) = 100μA,
R L = 1k ?
20
20
μs
Notes:
1. Derate power dissipation linearly 1.00mW/°C above 25°C.
2. RMA ?ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) from housing.
5. Pulse conditions: tp = 100μs; T = 10ms.
6. Measured using an aluminum alloy mirror at d = 1mm.
7. No re?ective surface at close proximity.
?2011 Fairchild Semiconductor Corporation
QRE1113, QRE1113GR Rev. 1.7.1
3
www.fairchildsemi.com
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
QRM85BXXG02E LED PMI REAR MOUNT GREEN
QS5K2TR MOSFET 2N-CH 30V 2A TSMT5
QS5U12TR MOSFET N-CH 30V 2A TSMT5
QS5U13TR MOSFET N-CH 30V 2A TSMT5
QS5U16TR MOSFET N-CH 30V 2A TSMT5
QS5U17TR MOSFET N-CH 30V 2A TSMT5
QS5U21TR MOSFET P-CH 20V 1.5A TSMT5
QS5U23TR MOSFET P-CH 20V 1.5A TSMT5
相关代理商/技术参数
QRE1113GR 制造商:Fairchild Semiconductor Corporation 功能描述:Reflective Object Sensor
QRE1113GR_Q 功能描述:光学开关（反射型，光电晶体管输出） Reflective Sensor RoHS:否 制造商:Fairchild Semiconductor 感应距离:1 mm 输出设备:Phototransistor 集电极—发射极最大电压 VCEO:30 V 最大集电极电流:20 mA 正向电压:1.2 V 反向电压:5 V 最大工作温度:+ 85 C 最小工作温度:- 25 C 安装风格:SMD/SMT 封装:Reel
QRE1113GR-CUT TAPE 制造商:FAIRCHILD 功能描述:QRE1113 Series 30 V 50 mA Miniature Reflective Object Sensor - SMD-4
QRE1230R30 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Super Fast Recovery Diode Modules 210 Amperes/1200 Volts
QRE1240R30 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:Super Fast Recovery Diode Modules 280 Amperes/1200 Volts
QRE141J-473Y 制造商:Panasonic Industrial Company 功能描述:RESISTOR
QRE2412001 制造商:POWEREX 制造商全称:Powerex Power Semiconductors 功能描述:3 Phase Diode Bridge Module 120 Amp/Phase Up to 2400 Volts
QRF0610T30 功能描述:DIODE MOD FAST DUAL CA 600V 33A RoHS:否 类别:半导体模块 >> 二极管，整流器 系列:- 标准包装:10 系列:- 电压 - 在 If 时为正向 (Vf)（最大）:1.45V @ 30A 电流 - 在 Vr 时反向漏电:15µA @ 400V 电流 - 平均整流 (Io)（每个二极管）:30A 电压 - (Vr)（最大）:400V 反向恢复时间(trr):65ns 二极管类型:标准 速度:快速恢复 = 200mA（Io） 二极管配置:2 个独立式 安装类型:底座安装 封装/外壳:ISOTOP 供应商设备封装:ISOTOP? 包装:管件